Temperature Variation of Reverse Saturation Current in P–N Junction

Physics

Temperature Variation of Reverse Saturation Current in P–N Junction

Description

Studies energy bandgap of semiconductor via reverse

Specifications

DIODE PN-junction Germanium diode
VOLTAGE RANGE 0–15 V
CURRENT RANGE 0–50 µA (approx.)
TEMPERATURE RANGE 0–60 °C
DISPLAY 16×2 LCD
OVEN ASSEMBLY Nichrome-wire oven, ~77×74 mm
BOARD DIMENSIONS ~345 × 110 × 24 mm